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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › MS2206
MS2206

MS2206 - Microsemi Corporation

Part Number
MS2206
Manufacturer
Microsemi Corporation
Brief Description
TRANS RF BIPO 7.5W 1A M115
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MS2206 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
4283 pcs
Reference Price
USD 0/pcs
Our Price
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MS2206 Detailed Description

Part Number MS2206
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f) -
Gain 10dB
Power - Max 7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 5V
Current - Collector (Ic) (Max) 1A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M115
Supplier Device Package M115
Weight -
Country of Origin -

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