APTM120A65FT1G

APTM120A65FT1G - Microsemi Corporation

Part Number
APTM120A65FT1G
Manufacturer
Microsemi Corporation
Brief Description
MOSFET 2N-CH 1200V 16A SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
APTM120A65FT1G PDF online browsing
Datasheet PDF Download
APTM120A65FT1G.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
428 pcs
Reference Price
USD 59.5333/pcs
Our Price
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APTM120A65FT1G Detailed Description

Part Number APTM120A65FT1G
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 16A
Rds On (Max) @ Id, Vgs 780 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7736pF @ 25V
Power - Max 390W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1
Weight -
Country of Origin -

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