| Part Number | APTM10DHM09T3G |
|---|---|
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 139A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 69.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
APTM100A12STG | Microsemi Corporation | MOSFET 2N-CH 1000V 68A LP8W | Details |
|
APTM100A13DG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Details |
 |
APTM100A13SCG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Details |
 |
APTM100A13SG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Details |
 |
APTM100A18FTG | Microsemi Corporation | MOSFET 2N-CH 1000V 43A SP4 | Details |
|
APTM100A23SCTG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Details |
|
APTM100A23STG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Details |
|
APTM100A40FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 21A SP1 | Details |
|
APTM100A46FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 19A SP1 | Details |
 |
APTM100AM90FG | Microsemi Corporation | MOSFET 2N-CH 1000V 78A SP6 | Details |
