APT50GP60J - Microsemi Corporation

Part Number	APT50GP60J
Part Status	Not For New Designs
IGBT Type	PT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	100A
Power - Max	329W
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Current - Collector Cutoff (Max)	500µA
Input Capacitance (Cies) @ Vce	5.7nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	ISOTOP®
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT5010B2FLLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX	Details
APT5010B2LLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX	Details
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APT5010JLLU2	Microsemi Corporation	MOSFET N-CH 500V 41A SOT-227	Details
APT5010JLLU3	Microsemi Corporation	MOSFET N-CH 500V 41A SOT227	Details
APT5010JN	APT	APT5010JN APT SMD or Through Hole New Original Stocks	Details
APT5010JVR	APT	APT5010JVR APT SMD or Through Hole New Original Stocks	Details
APT5010JVRU2	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227	Details
APT5010JVRU3	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227	Details
APT5010LFLLG	Microsemi Corporation	MOSFET N-CH 500V 46A TO-264	Details