| Part Number | JANTXV2N3741 |
|---|---|
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 1.25mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 250mA, 1V |
| Power - Max | 3W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | Details |
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JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
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JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
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JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
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JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
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JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | Details |
