IXTN30N100L

IXTN30N100L - IXYS

Part Number
IXTN30N100L
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1000V 30A SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTN30N100L PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
10 pcs
Reference Price
USD 57.15/pcs
Our Price
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IXTN30N100L Detailed Description

Part Number IXTN30N100L
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 30A
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 545nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 800W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 15A, 20V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Weight -
Country of Origin -

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