IXTK21N100 - IXYS

Part Number	IXTK21N100
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8400pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	500W (Tc)
Rds On (Max) @ Id, Vgs	550 mOhm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264 (IXTK)
Package / Case	TO-264-3, TO-264AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTK100N25P	IXYS	MOSFET N-CH 250V 100A TO-264	Details
IXTK102N30P	IXYS	MOSFET N-CH 300V 102A TO-264	Details
IXTK102N65X2	IXYS	MOSFET N-CH 650V 102A X2 TO-264	Details
IXTK110N20L2	IXYS	MOSFET N-CH 200V 110A TO-264	Details
IXTK110N30	IXYS	MOSFET N-CH 300V 110A TO-264	Details
IXTK120N20P	IXYS	MOSFET N-CH 200V 120A TO-264	Details
IXTK120N25	IXYS	MOSFET N-CH 250V 120A TO-264	Details
IXTK120N25P	IXYS	MOSFET N-CH 250V 120A TO-264	Details
IXTK120N65X2	IXYS	MOSFET N-CH 650V 120A TO-264	Details
IXTK120P20T	IXYS	MOSFET P-CH 200V 120A TO-264	Details