IXFN26N120P

IXFN26N120P - IXYS

Part Number
IXFN26N120P
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1200V 23A SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXFN26N120P PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
625 pcs
Reference Price
USD 41.053/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IXFN26N120P

IXFN26N120P Detailed Description

Part Number IXFN26N120P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 23A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 695W (Tc)
Rds On (Max) @ Id, Vgs 460 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Weight -
Country of Origin -

RELATED PRODUCTS FOR IXFN26N120P