IXFN120N65X2

IXFN120N65X2 - IXYS

Part Number
IXFN120N65X2
Manufacturer
IXYS
Brief Description
MOSFET N-CH 650V 108A SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXFN120N65X2 PDF online browsing
Datasheet PDF Download
IXFN120N65X2.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
75 pcs
Reference Price
USD 30.76/pcs
Our Price
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IXFN120N65X2 Detailed Description

Part Number IXFN120N65X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 15500pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 890W (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 54A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC
Weight -
Country of Origin -

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