IRG7CH50K10EF

IRG7CH50K10EF - Infineon Technologies

Part Number
IRG7CH50K10EF
Manufacturer
Infineon Technologies
Brief Description
IGBT CHIP WAFER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRG7CH50K10EF PDF online browsing
Datasheet PDF Download
IRG7CH50K10EF.pdf
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
6849 pcs
Reference Price
USD 3.768/pcs
Our Price
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IRG7CH50K10EF Detailed Description

Part Number IRG7CH50K10EF
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge 170nC
Td (on/off) @ 25°C 50ns/280ns
Test Condition 600V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Weight -
Country of Origin -

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