IRFU1018EPBF - Infineon Technologies

Part Number	IRFU1018EPBF
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2290pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Rds On (Max) @ Id, Vgs	8.4 mOhm @ 47A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRFU010	Vishay Siliconix	MOSFET N-CH 50V 8.2A I-PAK	Details
IRFU014	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK	Details
IRFU014PBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK	Details
IRFU020	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU020PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU024	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU024NPBF	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK	Details
IRFU024NPBF/IRFU024PBF	IR	IRFU024NPBF/IRFU024PBF IR TO-251 New Original Stocks	Details
IRFU024PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU1010Z	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK	Details