IPI200N25N3 G Detailed Description
| Part Number |
IPI200N25N3 G |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
250V |
| Current - Continuous Drain (Id) @ 25°C |
64A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs(th) (Max) @ Id |
4V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
7100pF @ 100V |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
300W (Tc) |
| Rds On (Max) @ Id, Vgs |
20 mOhm @ 64A, 10V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
PG-TO262-3 |
| Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR IPI200N25N3 G
