| Part Number | IPB60R125CPATMA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IPB60R040C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | Details |
|
IPB60R060C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | Details |
|
IPB60R060P7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB60R080P7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB60R099C6 | Infineon Technologies | MOSFET N-CH 600V 37.9A TO263 | Details |
|
IPB60R099C6ATMA1 | Infineon Technologies | MOSFET N-CH 600V 37.9A TO263 | Details |
|
IPB60R099C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | Details |
|
IPB60R099CP | Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | Details |
|
IPB60R099CPAATMA1 | Infineon Technologies | MOSFET N-CH 600V 31A TO263-3 | Details |
|
IPB60R099CPATMA1 | Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | Details |
