| Part Number | IPA60R125C6XKSA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 14.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2127pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPA60R060C7XKSA1 | Infineon Technologies | MOSFET N-CH 600V 16A TO-220FP | Details |
 |
IPA60R060P7XKSA1 | Infineon Technologies | HIGH POWER_NEW | Details |
|
IPA60R080P7XKSA1 | Infineon Technologies | HIGH POWER_NEW | Details |
|
IPA60R099C6 | Infineon Technologies | MOSFET N-CH 600V 37.9A TO220-FP | Details |
|
IPA60R099C6XKSA1 | Infineon Technologies | MOSFET N-CH 600V 37.9A TO220-FP | Details |
|
IPA60R099C7XKSA1 | Infineon Technologies | MOSFET N-CH 600V TO220-3 | Details |
|
IPA60R099P6XKSA1 | Infineon Technologies | MOSFET N-CH 600V TO220FP-3 | Details |
|
IPA60R099P7XKSA1 | Infineon Technologies | HIGH POWER_NEW | Details |
|
IPA60R120C7XKSA1 | Infineon Technologies | MOSFET N-CH 600V 11A TO220FP-3 | Details |
|
IPA60R120P7XKSA1 | Infineon Technologies | HIGH POWER_NEW | Details |
