IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1 - Infineon Technologies

Part Number
IAUT260N10S5N019ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET75V120V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IAUT260N10S5N019ATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
57325 pcs
Reference Price
USD 2.87216/pcs
Our Price
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IAUT260N10S5N019ATMA1 Detailed Description

Part Number IAUT260N10S5N019ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11830pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
Weight -
Country of Origin -

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