BSC046N02KS G - Infineon Technologies

Part Number	BSC046N02KS G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	27.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 10V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs	4.6 mOhm @ 50A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

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