MBRTA80035R - GeneSiC Semiconductor

Part Number	MBRTA80035R
Part Status	Active
Diode Configuration	1 Pair Common Anode
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	35V
Current - Average Rectified (Io) (per Diode)	400A
Voltage - Forward (Vf) (Max) @ If	720mV @ 400A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1mA @ 35V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MBRT120100	GeneSiC Semiconductor	DIODE MODULE 100V 120A 3TOWER	Details
MBRT120100R	GeneSiC Semiconductor	DIODE MODULE 100V 120A 3TOWER	Details
MBRT120150	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 60A 3 TOWER	Details
MBRT120150R	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 60A 3 TOWER	Details
MBRT12020	GeneSiC Semiconductor	DIODE MODULE 20V 120A 3TOWER	Details
MBRT120200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 60A 3 TOWER	Details
MBRT120200R	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 60A 3 TOWER	Details
MBRT12020R	GeneSiC Semiconductor	DIODE MODULE 20V 120A 3TOWER	Details
MBRT12030	GeneSiC Semiconductor	DIODE MODULE 30V 120A 3TOWER	Details
MBRT12030R	GeneSiC Semiconductor	DIODE MODULE 30V 120A 3TOWER	Details