DMN4036LK3-13 - Diodes Incorporated

Part Number	DMN4036LK3-13
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	453pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.12W (Ta)
Rds On (Max) @ Id, Vgs	36 mOhm @ 12A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN4008LFG-13	Diodes Incorporated	MOSFET N-CH 40V 14.4A PWDI3333-8	Details
DMN4008LFG-7	Diodes Incorporated	MOSFET N-CH 40V 14.4A PWDI3333-8	Details
DMN4009LK3	DIODES	40V N-CHANNEL ENHANCEMENT MODE MOSFET	Details
DMN4009LK3-13	Diodes Incorporated	MOSFET N-CH 40V 18A DPAK	Details
DMN4010LFG-13	Diodes Incorporated	MOSFET N-CH 40V 11.5A PWDI3333-8	Details
DMN4010LFG-7	Diodes Incorporated	MOSFET N-CH 40V 11.5A PWDI3333-8	Details
DMN4015LK3	DIODES	40V N-CHANNEL ENHANCEMENT MODE MOSFET	Details
DMN4015LK3-13	Diodes Incorporated	MOSFET N-CH 40V 13.5A DPAK	Details
DMN4020LFDE-13	Diodes Incorporated	MOSFET N-CH 40V 8A U-DFN2020-6	Details
DMN4020LFDE-7	Diodes Incorporated	MOSFET N-CH 40V 6-UDFN	Details