1N4007T-G - Comchip Technology

Part Number	1N4007T-G
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1000V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	5µA @ 1000V
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Mounting Type	Through Hole
Package / Case	DO-204AL, DO-41, Axial
Supplier Device Package	DO-41
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
1N4001	Micro Commercial Co	DIODE GEN PURP 50V 1A DO41	Details
1N4001 BK	Central Semiconductor Corp	DIODE GEN PURPOSE DO41	Details
1N4001 TR	Central Semiconductor Corp	DIODE GEN PURPOSE DO41	Details
1N4001(M1)	TOS	1N4001(M1) TOS 1808L New Original Stocks	Details
1N4001-A	DIODES	1.0A RECTIFIER	Details
1N4001-B	Diodes Incorporated	DIODE GEN PURP 50V 1A DO41	Details
1N4001-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	Details
1N4001-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	Details
1N4001-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	Details
1N4001-G	Comchip Technology	DIODE GEN PURP 50V 1A DO41	Details