| Part Number | 2N5209 |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100µA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | 30MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Details |
|
2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Details |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008A | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008B | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1011 | EXSHINE | germanium transistors | Details |
 |
2N1016B | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016C | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016D | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1057 | EXSHINE | alloy-junction germanium transistors | Details |
