| Part Number | 2N5193 |
|---|---|
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1.5A, 2V |
| Power - Max | 40W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Details |
|
2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Details |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008A | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008B | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1011 | EXSHINE | germanium transistors | Details |
 |
2N1016B | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016C | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016D | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1057 | EXSHINE | alloy-junction germanium transistors | Details |
