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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › NE681M13-A
NE681M13-A

NE681M13-A - CEL

Part Number
NE681M13-A
Manufacturer
CEL
Brief Description
TRANSISTOR NPN 1GHZ M13
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NE681M13-A PDF online browsing
Datasheet PDF Download
NE681M13-A.pdf
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
4283 pcs
Reference Price
USD 0/pcs
Our Price
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NE681M13-A Detailed Description

Part Number NE681M13-A
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.4dB ~ 2.7dB @ 1GHz
Gain -
Power - Max 140mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 7mA, 3V
Current - Collector (Ic) (Max) 65mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-3
Supplier Device Package M13
Weight -
Country of Origin -

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