| Número de pieza | SE30AFB-M3/6A |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 1.4A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 910mV @ 1.5A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 1.5µs |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Capacitancia @ Vr, F | 19pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-221AC, SMA Flat Leads |
| Paquete de dispositivo del proveedor | DO-221AC |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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SE30AFB-M3/6A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1.4A DO221AC | Detalles |
|
SE30AFB-M3/6B | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1.4A DO221AC | Detalles |
|
SE30AFBHM3/6A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO221AC | Detalles |
|
SE30AFBHM3/6B | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1.4A DO221AC | Detalles |
|
SE30AFD-M3/6A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO221AC | Detalles |
|
SE30AFD-M3/6B | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1.4A DO221AC | Detalles |
|
SE30AFDHM3/6A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1.4A DO221AC | Detalles |
|
SE30AFDHM3/6B | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1.4A DO221AC | Detalles |
|
SE30AFG-M3/6A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO221AC | Detalles |
|
SE30AFG-M3/6B | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1.4A DO221AC | Detalles |
