| Número de pieza | GBL08-M3/51 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 800V |
| Corriente - promedio rectificado (Io) | 4A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 2A |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-SIP, GBL |
| Paquete de dispositivo del proveedor | GBL |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
GBL005 | GeneSiC Semiconductor | DIODE BRIDGE 50V 4A GBL | Detalles |
 |
GBL005 D2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 4A GBL | Detalles |
 |
GBL005-E3/45 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 50V GBL | Detalles |
|
GBL005-E3/51 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 50V GBL | Detalles |
|
GBL005HD2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 4A GBL | Detalles |
 |
GBL005_1 | TSC | Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers | Detalles |
 |
GBL01 | GeneSiC Semiconductor | DIODE BRIDGE 100V 4A GBL | Detalles |
|
GBL01 D2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 100V 4A GBL | Detalles |
|
GBL01-E3/45 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 100V GBL | Detalles |
|
GBL01-E3/51 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 100V GBL | Detalles |
