S2D M4G - Taiwan Semiconductor Corporation

Número de pieza	S2D M4G
Estado de la pieza	Active
Tipo de diodo	Standard
Voltaje - DC Reverse (Vr) (Max)	200V
Corriente - promedio rectificado (Io)	2A
Voltaje - Adelante (Vf) (Máx) @ Si	1.15V @ 2A
Velocidad	Standard Recovery >500ns, > 200mA (Io)
Tiempo de recuperación inversa (trr)	1.5µs
Current - Reverse Leakage @ Vr	1µA @ 200V
Capacitancia @ Vr, F	30pF @ 4V, 1MHz
Tipo de montaje	Surface Mount
Paquete / caja	DO-214AA, SMB
Paquete de dispositivo del proveedor	DO-214AA (SMB)
Temperatura de funcionamiento - unión	-55°C ~ 150°C
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
S2D	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 2A SMB	Detalles
S2D M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Detalles
S2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Detalles
S2D-13	Diodes Incorporated	DIODE GEN PURP 200V 1.5A SMB	Detalles
S2D-13-F	Diodes Incorporated	DIODE GEN PURP 200V 1.5A SMB	Detalles
S2D-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.5A DO214AA	Detalles
S2D-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.5A DO214AA	Detalles
S2D-LTP	Micro Commercial Co	DIODE GEN PURP 200V DO214AA	Detalles
S2D-M3/52T	Vishay Semiconductor Diodes Division	DIODE GPP 1.5A 200V DO-214AA	Detalles
S2D-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GPP 1.5A 200V DO-214AA	Detalles