TK6Q65W,S1Q Detailed Description
Part Number |
TK6Q65W,S1Q |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650V |
Current - Continuous Drain (Id) @ 25°C |
5.8A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
3.5V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
390pF @ 300V |
Vgs (Max) |
±30V |
FET Feature |
- |
Power Dissipation (Max) |
60W (Tc) |
Rds On (Max) @ Id, Vgs |
1.05 Ohm @ 2.9A, 10V |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I-Pak |
Package / Case |
TO-251-3 Stub Leads, IPak |
Weight |
- |
Country of Origin |
- |
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