| Part Number | TK39N60X,S1F |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.9mA |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 270W (Tc) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 12.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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TK39A60W,S4VX | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 39A TO220-3 | Details |
 |
TK39J60W,S1VQ | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-3P | Details |
|
TK39J60W5,S1VQ | Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO-3P(N) | Details |
|
TK39N60W,S1VF | Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO247 | Details |
|
TK39N60W5,S1VF | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A T0247 | Details |
|
TK39N60X,S1F | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-247 | Details |
