RN2907FE,LF(CB - Toshiba Semiconductor and Storage

Part Number	RN2907FE,LF(CB
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RN2901	TOSHIBA	RN2901 TOSHIBA SOIT36.. New Original Stocks	Details
RN2901(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2901FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2902	TOSHIBA	RN2902 TOSHIBA SOT-36.. New Original Stocks	Details
RN2902(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2902,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2902,LF(CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2902FE(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2902FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W ES6	Details
RN2903,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details