STI10N62K3 Detailed Description
Part Number |
STI10N62K3 |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
620V |
Current - Continuous Drain (Id) @ 25°C |
8.4A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1250pF @ 50V |
Vgs (Max) |
±30V |
FET Feature |
- |
Power Dissipation (Max) |
125W (Tc) |
Rds On (Max) @ Id, Vgs |
750 mOhm @ 4A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Weight |
- |
Country of Origin |
- |
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