FCI25N60N-F102

FCI25N60N-F102 - ON Semiconductor

Part Number
FCI25N60N-F102
Manufacturer
ON Semiconductor
Brief Description
MOSFET N-CH 600V 25A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FCI25N60N-F102 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
44180 pcs
Reference Price
USD 3.7268/pcs
Our Price
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FCI25N60N-F102 Detailed Description

Part Number FCI25N60N-F102
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3352pF @ 100V
FET Feature -
Power Dissipation (Max) 216W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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