2SC5551AE-TD-E

2SC5551AE-TD-E - ON Semiconductor

Part Number
2SC5551AE-TD-E
Manufacturer
ON Semiconductor
Brief Description
TRANS NPN BIPO HI FREQ PCP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SC5551AE-TD-E PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
85000 pcs
Reference Price
USD 0.4725/pcs
Our Price
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2SC5551AE-TD-E Detailed Description

Part Number 2SC5551AE-TD-E
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 3.5GHz
Noise Figure (dB Typ @ f) -
Gain -
Power - Max 1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V
Current - Collector (Ic) (Max) 300mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PCP
Weight -
Country of Origin -

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