SPP02N60S5HKSA1

SPP02N60S5HKSA1 - Infineon Technologies

Part Number
SPP02N60S5HKSA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 600V 1.8A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPP02N60S5HKSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3996 pcs
Reference Price
USD 0/pcs
Our Price
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SPP02N60S5HKSA1 Detailed Description

Part Number SPP02N60S5HKSA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 1.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Weight -
Country of Origin -

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