IPP65R095C7XKSA1 Detailed Description
Part Number |
IPP65R095C7XKSA1 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650V |
Current - Continuous Drain (Id) @ 25°C |
24A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2140pF @ 400V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
128W (Tc) |
Rds On (Max) @ Id, Vgs |
95 mOhm @ 11.8A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO-220-3 |
Package / Case |
TO-220-3 |
Weight |
- |
Country of Origin |
- |
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