IPP65R065C7XKSA1

IPP65R065C7XKSA1 - Infineon Technologies

Part Number
IPP65R065C7XKSA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPP65R065C7XKSA1 PDF online browsing
Datasheet PDF Download
IPP65R065C7XKSA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4576 pcs
Reference Price
USD 5.539/pcs
Our Price
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IPP65R065C7XKSA1 Detailed Description

Part Number IPP65R065C7XKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 400V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 171W (Tc)
Rds On (Max) @ Id, Vgs 65 mOhm @ 17.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
Weight -
Country of Origin -

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