IPD600N25N3GBTMA1

IPD600N25N3GBTMA1 - Infineon Technologies

Part Number
IPD600N25N3GBTMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 250V 25A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD600N25N3GBTMA1 PDF online browsing
Datasheet PDF Download
IPD600N25N3GBTMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3988 pcs
Reference Price
USD 0/pcs
Our Price
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IPD600N25N3GBTMA1 Detailed Description

Part Number IPD600N25N3GBTMA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Rds On (Max) @ Id, Vgs 60 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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