IPD088N04LGBTMA1

IPD088N04LGBTMA1 - Infineon Technologies

Part Number
IPD088N04LGBTMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 40V 50A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD088N04LGBTMA1 PDF online browsing
Datasheet PDF Download
IPD088N04LGBTMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4045 pcs
Reference Price
USD 0/pcs
Our Price
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IPD088N04LGBTMA1 Detailed Description

Part Number IPD088N04LGBTMA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 20V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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